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OMH310 OMH315
DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Dual 50 Volt, 15 And 20 Amp H-Bridge With Current And Temperature Sensing In A Low Profile Plastic Package
FEATURES
* * * * * * H-Bridge Configuration Zener Gate Protection 10 m Shunt Resistor 2 Linear Thermal Sensors, One For Each Bridge Isolated Package Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common VDD lines, precision series shunt resistor in the source line, and sensing elements to monitor the substrate temperature of each switch. This device is ideally suited for Stepping Motor Control applications where size, performance, and efficiency are key.
2.1
MAXIMUM RATINGS (TC = @ 25C)
Part Number OMH310 OMH315 VDS (Volts) 50 50 RDS(on) (m ) 100 70 ID (Amps) 15 20 Package MP-3 MP-3
ABSOLUTE MAXIMUM RATINGS (TC = @ 25C unless otherwise noted)
Parameter Drain Source Voltage, VDS Drain-Gate (RGS = 1m ), VDGR Continuous Drain Current, ID @ TC = 25C Continuous Drain Current, ID @ TC = 70C Pulse Drain Current, IDM (1) Maximum Power Dissipation, PD @ TC = 25C Maximum Power Dissipation, PD @ TC = 70C Linear Derating Factor, Junction-To-Case Thermal Resistance, Junction-To-Case OMH310 50 50 15 11 56 20 11 0.2 5.0 OMH315 50 50 25 16 100 50 18 0.33 3.0 Units V V A A A W W W/C C/W
(2) (2)
Notes: (1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125C.
4 11 R0
2.1 - 29
OMH310 OMH315
ELECTRICAL CHARACTERISTICS: OMH310 (TC = 25 unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 70C Gate-Body Leakage, VGS = 12 V IGSS V(BR)DSS IDSS 50 25.0 500.0 500 V A A nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 A Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 9.0 A Static Drain-Source On-Resistance TC = 70C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 V ID(on) VGS(th) RDS(on) 2.0 15 4.0 0.1 0.2 A V
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS > ID(on) X RDS(on) Max., ID = 9.0A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0, f = 1.0 mHz gfs Ciss Coss Crss 3.0 650 450 280 mho pF pF pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 30 V, ID = 3 A, RGS = 50 , VGS = 10 V td(on) tr td(off) tf 30 85 90 110 ns ns ns ns
2.1
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current Source - Drain Current Pulsed Forward On-Voltage, ISD = 28 A, VGS = 0 Reverse Recovery Time Reverse Recovered Charge ISD = 13 A, di/dt = 100 A/Sec ISD ISDM* VSD trr Qrr 120 0.15 14 56 1.8 A A V ns C
RESISTOR CHARACTERISTICS
Resistor Tolerance Temperature Coefficient, -40C to +70C RS Tcr 9.0 10 100 11 m ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%
2.1 - 30
OMH310 OMH315
ELECTRICAL CHARACTERISTICS: OMH315A (TC = 25 unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current = VGS , VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 70C Gate-Body Leakage, VGS = 12 V IGSS V(BR)DSS IDSS 50 250 750 500 V A A nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 A Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A Static Drain-Source On-Resistance TC = 70C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 V ID(on) VGS(th) RDS(on) 2.0 20 4.0 0.07 0.14 A V
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS > ID(on) X RDS(on) Max., ID = 10 A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0, f = 1.0 mHz gfs Ciss Coss Crss 5.0 1020 500 120 mho pF pF pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 30 V, ID = 10 A, RGS = 4.7 , VGS = 10 V, RL = 2.4 td(on) tr td(off) tf 50 75 50 50 ns ns ns ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current Source - Drain Current (Pulsed) Forward On-Voltage, ISD = 28 A, VGS = 0 Reverse Recovery Time Reverse Recovered Charge ISD = 13 A,di/dt = 100 A/Sec ISD ISDM* VSD trr Qrr 100 0.15 25 100 2.4 A A V ns C
2.1
RESISTOR CHARACTERISTICS
Resistor Tolerance Temperature Coefficient, -40C to +70C RS Tcr 9.0 10 100 11 m ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%
2.1 - 31
OMH310 OMH315
SCHEMATIC
32 26 31 30 29 28 27 24 25 23 18
Q1 34 33 R1 Z1
Q3 R3 Z3
Q5 R5 Z5
Q7 R7 Z7 20 19
Q2 1 2 PTC 1 RS R2 Z2
Q4 R4 Z4
Q6 R6 Z6 RS
Q8 R8 Z8 PTC 2 14 15
3
4
7
6
5
8
11 12
13
9
16 10
17
21
22
2.1 MECHANICAL OUTLINE
.600 2.000 1.350 .325 .150 (4) PLCS. .250 .500
. 35 1
.050 (34) PLCS.
1
.150
2.450
3.000
4.000
.300 .500 .360 .020 .360 MAX. .180
.250
Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: Pin 6: Pin 7: Pin 8: Pin 9: Pin 10: Pin 11: Pin 12: Pin 13: Pin 14: Pin 15: Pin 16: Pin 17:
Gate Q2 Source Q2 PTC 1 PTC 1 Gate Q4 Source Q4 Sense R 1 Sense R 1 Gate Q6 Source Q6 Return Sense Return Return Gate Q8 Source Q8 Sense R 2 Sense R 2
Pin 34: Gate Q1 Pin 33: Source Q1 Pin 32: Output Q1, Q2 Pin 31: Gate Q3 Pin 30: Source Q3 Pin 29: VM Pin 28: VM Pin 27: VM Pin 26: Output Q3, Q4 Pin 25: Gate Q5 Pin 24: Source Q5 Pin 23: Output Q5, Q6 Pin 22: +PTC Pin 21: -PTC Pin 20: Gate Q7 Pin 19: Source Q7 Pin 18: Output Q7, Q8
Contact factory for lead bending options. Mounting Recommendations: Maximum Mounting Torque: 3.0 mN. The module must be attached to a flat heat sink (flatness 100m maximum).
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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